| PART |
Description |
Maker |
| EM42AM1684LBA-75FE EM42AM1684LBA-7FE EM42AM1684LBA |
512Mb (8M×4Bank×16) Double DATA RATE SDRAM
|
Eorex Corporation
http://
|
| HYB25D512800AT-7 HYB25D512800AT-8 HYB25D512160AT-8 |
512Mb (64Mx8) DDR266A (2-3-3)
512Mb (64Mx8) DDR200 (2-2-2)
512Mb (32Mx16) DDR200 (2-2-2)
512Mb (128Mx4) DDR200 (2-2-2)
512Mb (64Mx8) DDR333 (2.5-3-3) ？的512Mb4Mx8DDR333内存.5-3-3）？
|
Electronic Theatre Controls, Inc.
|
| K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
| TS512MJFV30 |
512MB USB2.0 JetFlash垄芒V30
512MB USB2.0 JetFlash?V30
|
Transcend Information. Inc.
|
| W3EG6464S-BD4 |
512MB - 64Mx64 DDR SDRAM UNBUFFERED w/PLL 512MB 64Mx64 DDR SDRAM的缓冲瓦锁相
|
STMicroelectronics N.V.
|
| EBE52UC8AAFV EBE52UC8AAFV-AE-E EBE52UC8AAFV-BE-E E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒
512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a>
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
|
ELPIDA MEMORY INC
|
| NX3L2467 NX3L2467HR NX3L2467GU NX3L2467PW |
Dual low-ohmic double-pole double-throw analog switch
|
NXP Semiconductors
|
| 1300940224 |
Standard Duty Support Grip, Double Eye, Closed Mesh, Double Weave
|
Molex Electronics Ltd.
|
| 1300940228 |
Standard Duty Support Grip, Double Eye, Closed Mesh, Double Weave
|
Molex Electronics Ltd.
|
